EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as
EPC
EPC2016C
GANFET TRANS 100V 18A BUMPED DIE
EPC
EPC2106
GANFET TRANS SYM 100V BUMPED DIE
EPC
EPC2104
GAN TRANS SYMMETRICAL HALF BRIDG
EPC
EPC2111
GAN TRANS ASYMMETRICAL HALF BRID
EPC
EPC2102
GAN TRANS SYMMETRICAL HALF BRIDG
EPC
EPC2103
GAN TRANS SYMMETRICAL HALF BRIDG
EPC
EPC2103ENGRT
GANFET TRANS SYM HALF BRDG 80V
EPC
EPC2106ENGRT
GAN TRANS 2N-CH 100V BUMPED DIE
EPC
EPC2110ENGRT
GAN TRANS 2N-CH 120V BUMPED DIE
EPC
EPC2100ENGRT
GANFET 2 N-CH 30V 9.5A/38A DIE
EPC
EPC2102ENGRT
GANFET 2 N-CHANNEL 60V 23A DIE
EPC
EPC2101ENGRT
GAN TRANS ASYMMETRICAL HALF BRID
EPC
EPC2100
GAN TRANS ASYMMETRICAL HALF BRID
EPC
EPC2101
GAN TRANS ASYMMETRICAL HALF BRID
EPC
EPC2105
GAN TRANS ASYMMETRICAL HALF BRID
EPC
EPC2108
GANFET 3 N-CH 60V/100V 9BGA
EPC
EPC2110
GANFET 2NCH 120V 3.4A DIE
EPC
EPC2105ENGRT
GANFET 2NCH 80V 9.5A DIE
EPC
EPC2111ENGRT
GAN TRANS ASYMMETRICAL HALF BRID
EPC
EPC2100ENG
GAN TRANS 2N-CH 30V BUMPED DIE