Global Power Technologies Group, Inc. ('GPTG') founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.
Global Power Technologies Group
GP1M010A080H
MOSFET N-CH 800V 9.5A TO220
Global Power Technologies Group
GP1M011A050FH
MOSFET N-CH 500V 11A TO220F
Global Power Technologies Group
GP1M011A050H
MOSFET N-CH 500V 11A TO220
Global Power Technologies Group
GP1M012A060H
MOSFET N-CH 600V 12A TO220
Global Power Technologies Group
GP1M003A080FH
MOSFET N-CH 800V 3A TO220F
Global Power Technologies Group
GP1M003A090C
MOSFET N-CH 900V 2.5A DPAK
Global Power Technologies Group
GP2M008A060CG
MOSFET N-CH 600V 7.5A DPAK
Global Power Technologies Group
GP2M008A060FG
MOSFET N-CH 600V 7.5A TO220F
Global Power Technologies Group
GP2M008A060HG
MOSFET N-CH 600V 7.5A TO220
Global Power Technologies Group
GP1M012A060FH
MOSFET N-CH 600V 12A TO220F
Global Power Technologies Group
GP1M013A050FH
MOSFET N-CH 500V 13A TO220F
Global Power Technologies Group
GP1M015A050H
MOSFET N-CH 500V 14A TO220
Global Power Technologies Group
GP1M005A040PG
MOSFET N-CH 400V 3.4A IPAK
Global Power Technologies Group
GP1M005A050CH
MOSFET N-CH 500V 4.5A DPAK
Global Power Technologies Group
GP1M005A050FH
MOSFET N-CH 500V 4.5A TO220F
Global Power Technologies Group
GP1M005A050H
MOSFET N-CH 500V 4.5A TO220
Global Power Technologies Group
GHXS050A170S-D3
1700V 50A SIC SBD PARALLEL
Global Power Technologies Group
GCMS020A120S1-E1
SIC MOSFET/ SBD MODULE SOT-227 C
Global Power Technologies Group
GHIS060A120S1-E1
SI IGBT/ SIC SBD HYBRID MODULE S
Global Power Technologies Group
GCMS080A120S1-E1
SIC MOSFET/ SBD MODULE SOT-227 C